Electrical transport properties of two-dimensional MoS2 nanosheets synthesized by novel method. (1st August 2017)

• Record Type: Journal Article
• Authors: Gunasekaran, V.; Devaraju, M.K.; Yuvaraj, S.; Surya, V.J.Y.; Singh, Varu; Karthikeyan, K.; Kim, S.-J.
• Is Part Of: Materials science in semiconductor processing. Volume 66(2017)
• Page Start: 81
• Page End: 86
• Publication Date: 2017-08-01
• Subjects: MoS2 nanosheets -- Supercritical Fluid Method -- SCLC -- F-N tunneling -- Poole-Frenkel conduction -- Raman mapping; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.04.011
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, we have reported the electrical transport properties of two-dimensional molybdenum disulfide (MoS2 ) nanosheets prepared by supercritical fluid method. Drop-casting technique has been used to make MoS2 thinfilm. The surface morphology and crystallinity of as-prepared MoS2 are studied using TEM, AFM, Raman and X-ray diffraction analyses. The observation of non-linear current-voltage ( I-V ) characteristics has been analyzed with different current conduction mechanisms such as Schottky barrier (SB), space-charge limited conduction, Fowler-Nordheim tunneling, and Poole-Frenkel conduction. Clear symmetricity in I-V curves confirms that charge-transport is not influenced by SB. However, all other transport mechanisms are to be found responsible for the non-linearity. The charge carrier mobility of the device is determined as ~1530 cm 2 /V s which is the highest value among supercritical fluid processed MoS2 to-date. The presence of bulk counterpart in MoS2 is accountable for such anomalous transport behavior and it is supported by Raman mapping analysis, evidently. Overall, our results demonstrate the understanding of the fundamental charge transport mechanisms in MoS2 thinfilm that can be the essential factors in development of various MoS2 based electronic devices and their applications.