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HARVARD Citation
Liu, C. et al. (2017). Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe2. Small. 13 (17), p. n/a. [Online].
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Liu, C. et al. (2017). Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe2. Small. 13 (17), p. n/a. [Online].