Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe2. Issue 17 (20th February 2017)

• Record Type: Journal Article
• Authors: Liu, Chunsen; Yan, Xiao; Wang, Jianlu; Ding, Shijin; Zhou, Peng; Zhang, David Wei
• Is Part Of: Small. Volume 13:Issue 17(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02-20
• Subjects: charge‐trap memory -- high writing speed -- overerase phenomenon -- WSe2; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201604128
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Atomic crystal charge trap memory, as a new concept of nonvolatile memory, possesses an atomic level flatness interface, which makes them promising candidates for replacing conventional FLASH memory in the future. Here, a 2D material WSe2 and a 3D Al2 O3 /HfO2 /Al2 O3 charge‐trap stack are combined to form a charge‐trap memory device with a separation of control gate and memory stack. In this device, the charges are erased/written by built‐in electric field, which significantly enhances the write speed to 1 µs. More importantly, owing to the elaborate design of the energy band structure, the memory only captures electrons with a large electron memory window over 20 V and trap selectivity about 13, both of them are the state‐of‐the‐art values ever reported in FLASH memory based on 2D materials. Therefore, it is demonstrated that high‐performance charge trap memory based on WSe2 without the fatal overerase issue in conventional FLASH memory can be realized to practical application. Abstract : A 2D WSe2 and a semiconductor industry compatible charge‐trap stack are combined to produce exceptional memory. By carefully designing the energy‐band structure, the memory write time is as fast as 1 µs and an electron window of over 20 V with charge‐trap selectivity of about 13 is achieved. These are state‐of‐the‐art values never previously reported in flash memory based on atomic crystals.