Effect of eccentricity on junction and junctionless based silicon nanowire and silicon nanotube FETs. (July 2017)

• Record Type: Journal Article
• Authors: Scarlet, S. Priscilla; Ambika, R.; Srinivasan, R.
• Is Part Of: Superlattices and microstructures. Volume 107(2017)
• Page Start: 178
• Page End: 188
• Publication Date: 2017-07
• Subjects: Silicon nanowire -- Silicon nanotube -- Eccentricity -- Junctionless; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.04.015
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, the effect of eccentricity on Junction-based Silicon Nanowire FET, Junction-based Silicon Nanotube FET, Junctionless-based Silicon Nanowire FET, and Junctionless-based Silicon Nanotube FET is investigated. Three kinds of eccentric structures are considered here. The impact of eccentricity on effective gate oxide thickness thereby gate oxide capacitance, and effective channel width are studied using 3D numerical simulations. Average radius of an ellipse is used to generate a model which captures the impact of eccentricity on gate oxide capacitance, and verified using TCAD simulations in MOS nanowire structure. The impact of eccentricity on ON current (ION ), OFF current (IOFF ), ION /IOFF ratio, and Unity gain cutoff frequency are investigated. Eccentricity increases the effective gate oxide thickness, the effective channel width, ION, and IOFF but reduces ION /IOFF ratio. Highlights: The effect of eccentricity on Junction-based Silicon Nanowire FET, Junction-based Silicon Nanotube FET, Junctionless-based Silicon Nanowire FET, and Junctionless-based Silicon Nanotube FET is investigated. The impact of eccentricity on effective gate oxide thickness thereby gate oxide capacitance, and effective channel width are studied using 3D numerical simulations. A model is proposed which captures the impact of eccentricity on gate oxide capacitance, and is verified using TCAD simulations in MOS nanowire structure. The impact of eccentricity on ON current (ION ), OFF current (IOFF ), ION /IOFF ratio, and Unity gain cutoff frequency are investigated.