Band gap measurement of Bi2MoxW1-xO6 by low loss electron energy loss spectroscopy. (1st June 2017)

• Record Type: Journal Article
• Authors: Morales-Cruz, Damasio; Paraguay-Delgado, Francisco; Borja-Urby, Raúl; Basurto-Cereceda, Sofía; Herrera-Pérez, Guillermo; Longo, Paolo; Malac, Marek
• Is Part Of: Materials science in semiconductor processing. Volume 63(2017)
• Page Start: 184
• Page End: 189
• Publication Date: 2017-06-01
• Subjects: Electron energy loss spectroscopy (EELS) -- Transmission electron microscopy -- Band gap -- Energy loss function -- Bi2MoxW1−xO6; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.02.016
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This work shows the comparison of high-resolution electron energy loss spectra (HR-EELS) in the low loss region (0−15 eV) to investigate the electronic structure from koechilinite Bi2 MoO6 to rusellite Bi2 WO6 varying the stoichiometric relation Bi2 Mox W1−x O6 . The effect of the Mo to W ratio on the bandgap energy was evaluated on individual particles. Two approximations were considered in order to determine the band gap energy value, the first one was a linear fit and the second one was a mathematical fit. Both analyses are in agreement with those ones collected and analyzed by UV–Vis characterization. Our results suggest a direct electronic transition that increases from about 2.53 eV to about 3 eV as the W content increase from 0% to 100% wt. X-ray diffraction was used to corroborate the crystal structure and crystal size; transmission electron microscopy was used to monitor the morphology evolution and UV–Vis spectroscopy in diffuse reflectance mode to determine the Eg. These techniques complement the characterization of these materials. Highlights: Analysis of the low loss energy region using HR-EELS. Energy loss function was determined by the K-K analysis. The fitting suggests a direct electronic transition.