Crystalline damage in silicon wafers and 'rare event' failure introduced by low-energy mechanical impact. (1st June 2017)

• Record Type: Journal Article
• Authors: Atrash, F.; Meshi, I.; Krokhmal, A.; Ryan, P.; Wormington, M.; Sherman, D.
• Is Part Of: Materials science in semiconductor processing. Volume 63(2017)
• Page Start: 40
• Page End: 44
• Publication Date: 2017-06-01
• Subjects: Brittle crystal wafers -- Processing -- Crystalline damage -- X-Ray diffraction -- Rare event -- Fracture; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.01.018
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We used X-ray diffraction imaging to detect and characterize mechanical damage introduced to 300 mm silicon wafers by low impact energy exerted on the wafer edge. Maps of crystalline damage show a correlation between the damage size, the magnitude of the impact energy and the location of the impact point. We demonstrate the existence of crystalline non-visual defects; crystalline defects that appear in the X-Ray diffraction images but not in optical microscopy or scanning electron microscope. We propose a mechanism of crystalline damage formation at low impact energies based on finite element analysis and high-resolution synchrotron white beam transmission X-ray topography. Finally, we propose the concept of 'rare-event' to described relatively low rate of occurrence of wafer failure by fracture within semiconductor manufacturing facilities.