Doping top-down e-beam fabricated germanium nanowires using molecular monolayers. (May 2017)

• Record Type: Journal Article
• Authors: Long, B.; Alessio Verni, G.; O'Connell, J.; Shayesteh, M.; Gangnaik, A.; Georgiev, Y.M.; Carolan, P.; O'Connell, D.; Kuhn, K.J.; Clendenning, S.B.; Nagle, R.; Duffy, R.; Holmes, J.D.
• Is Part Of: Materials science in semiconductor processing. Volume 62(2017)
• Page Start: 196
• Page End: 200
• Publication Date: 2017-05
• Subjects: Molecular layer doping -- Nanowires -- Semiconductors -- Germanium -- Conformal -- Non-destructive; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.10.038
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.