Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers. (July 2017)

• Record Type: Journal Article
• Authors: Sun, Jie; Sun, Huiqing; Yi, Xinyan; Yang, Xian; Liu, Tianyi; Wang, Xin; Zhang, Xiu; Fan, Xuancong; Zhang, Zhuding; Guo, Zhiyou
• Is Part Of: Superlattices and microstructures. Volume 107(2017)
• Page Start: 49
• Page End: 55
• Publication Date: 2017-07
• Subjects: Efficiency -- UVLEDs -- Mg doped -- Staggered barriers -- AlGaN; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.03.055
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Ultraviolet light-emitting diodes (UVLEDs) with staggered barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation results show that the UVLED with staggered barriers get a little enhancement comparing to the conventional one, on the contrary the structure with p-doped staggered barriers has higher efficiency and power due to enhancement of the holes' injection and the electrons' confinement. Then structures with different Al content in the Mg-doped barriers have been studied numerically and that confirmed the best. Highlights: Mg-doped staggered barriers can improve the efficiency and rad recombination hugely. The Mg-doped one has enhanced the performance better than the undoped one. The best Al-content in the upper step of the p-type staggered barriers has been confirmed. The root of low efficiency has been explored.