V/III ratio effects on high quality InAlAs for quantum cascade laser structures. (April 2017)

• Record Type: Journal Article
• Authors: Demir, Ilkay; Elagoz, Sezai
• Is Part Of: Superlattices and microstructures. Volume 104(2017)
• Page Start: 140
• Page End: 148
• Publication Date: 2017-04
• Subjects: V/III ratio -- InAlAs -- MOCVD -- Quantum cascade lasers; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.02.022
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this study we report the V/III ratio effects on growth, structural, optical and doping characteristics of low growth rate (∼1 Å/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown Inx Al1−x As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the V/III ratio with fixed metalorganic precursor flow is a crucial parameter on Inx Al1−x As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. Graphical abstract: Highlights: Inx Al1−x As epilayers were grown by MOCVD with very low growth rates for quantum cascade laser applications. V/III ratio is shown to be a crucial parameter for crystallinity, optical and electrical properties. Interface defect peak intensity increases with the increase of AsH3 flow.