Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. (March 2017)

• Record Type: Journal Article
• Authors: Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao
• Is Part Of: Superlattices and microstructures. Volume 103(2017)
• Page Start: 113
• Page End: 120
• Publication Date: 2017-03
• Subjects: AlGaN/GaN HFETs -- Diffused Ohmic contact metal atoms -- Polarization Coulomb field scattering; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.01.031
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was verified this enhanced effect is due to the enhanced polarization Coulomb field (PCF) scattering. Highlights: With device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. This enhanced influence was explored by experiment and theoretical calculation. It was verified that this enhanced effect is due to the enhanced PCF scattering.