Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors. (June 2017)

• Record Type: Journal Article
• Authors: Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 73
• Page End: 79
• Publication Date: 2017-06
• Subjects: Metal induced crystallization -- Thin-film transistors -- Gettering -- Leakage current; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.011
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: We examined metal-induced crystallized (MIC) polycrystalline silicon (poly-Si) film. Gettering was applied to MIC poly-Si thin-film transistors (TFTs). The Ni trap state density in the MIC poly-Si film greatly decreased after gettering. The leakage current of MIC poly-Si TFTs decreased after nickel silicide gettering. We suggested an appropriate model to explain gettering effect. Abstract: Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt ) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model.