Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation. (June 2017)

• Record Type: Journal Article
• Authors: Matsukawa, Takashi; Liu, Yongxun; Mori, Takahiro; Morita, Yukinori; Otsuka, Shintaro; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 103
• Page End: 108
• Publication Date: 2017-06
• Subjects: FinFET -- Ion implantation -- Parasitic resistance -- Variability -- Crystal defects; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.014
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Parasitic resistance and its variability are obstacles for the scaling of FinFETs. Reducing the fin thickness degrades in parasitic resistance and its variability. Implantation of As instead of P for the extension doping causes the same effect. These phenomena are observed to be caused by residual defects in the crystalline fin. Abstract: The influence of extension doping on parasitic resistance and its variability has been investigated for FinFETs. Electrical characterization of FinFETs and crystallinity evaluation of the doped fin structure are carried out for different fin thicknesses and different donor species for ion implantation, i.e., As and P. Reducing the fin thickness and the use of donor species with a larger mass cause serious degradation in the variability and median value of the parasitic resistance. Crystallinity evaluation by transmission electron microscope reveals that significant crystal defects remain after dopant activation annealing for the cases of smaller fin thickness and the implanted dopant with a larger mass. The unrecovered defects cause serious degradation in the parasitic resistance and its variability.