Stacked resistive switches for AND/OR logic gates. (June 2017)

• Record Type: Journal Article
• Authors: Kim, Myung Ju; Son, Kyung Rock; Park, Ju Hyun; Kim, Tae Geun
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 45
• Page End: 48
• Publication Date: 2017-06
• Subjects: Resistive switching -- Memristive computing -- Logic gate; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.006
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Stacked resistive switches are utilized for logic gates. Stacked resistive switches operate based on "high" and "low" resistance states. Two resistance states indicate the logical states of "0" and "1". AND and OR operations are successfully demonstrated by arranging two resistive switches in a serial or parallel connection. Abstract: This paper reports the use of stacked resistive switches as logic gates for implementing the "AND" and "OR" operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of "0" and "1", respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.