Electrically heterogeneous high dielectric BaTi0.4(Fe0.5Nb0.5)0.6O3 ceramic. (June 2017)

• Record Type: Journal Article
• Authors: Patel, Piyush Kumar; Yadav, K.L.
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 39
• Page End: 44
• Publication Date: 2017-06
• Subjects: Sintering -- Schottky barrier -- Electrical properties -- Magnetocapacitance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.008
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: Found High dielectric constant (12, 708) with low loss (0.23) at room temperature. Ti-dopant suppressed dielectric loss (0.03) of 1150 °C sintered BTFN ceramic. Formation of barrier layers on grain-grain boundary interfaces observed. Reporting first time about presence of magnetocapacitance (5.8%) in the system. Abstract: The effect of sintering temperatures on the lattice parameters, microstructure and electrical properties of BaTi0.4 (Fe0.5 Nb0.5 )0.6 O3 perovskite ceramics were investigated. Impedance spectroscopy analysis confirms that this material is electrically heterogeneous which plays a major role for the high dielectric constant. The sintering temperatures have a sensitive influence on the values of the dielectric constant. High dielectric constant (12, 708) with low dielectric loss (0.23) was achieved at room temperature for 1250 °C sintered ceramic. Activation energy was found to be 0.25 eV and 0.31 eV corresponding to grain and grain boundary, respectively which confirms that the grain boundaries are more insulating than grains. We observed the high magnetocapacitance (5.8%) at 9 kOe for 1250 °C sintered sample which is useful for the practical application. This study will help to modify the BaFe0.5 Nb0.5 O3 based materials and lead to more applications in the microelectronics devices.