HfO2-based resistive switching memory with CNTs electrode for high density storage. (June 2017)

• Record Type: Journal Article
• Authors: Cheng, W.K.; Wang, F.; Han, Y.M.; Zhang, Z.C.; Zhao, J.S.; Zhang, K.L.
• Is Part Of: Solid-state electronics. Volume 132(2017)
• Page Start: 19
• Page End: 23
• Publication Date: 2017-06
• Subjects: RRAM -- HfO2 -- Carbon nanotube -- High density storage; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.03.004
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: CNTs are used as electrode in HfO2 -based RRAM devices for high density integration. The device displays self-compliance, forming-free behavior and LRS nonlinearity. The device switches successfully with the Ireset less than 130 nA. The resistive switching mechanism is discussed as well. Abstract: In this paper, the HfO2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO2 /CNTs devices show self-compliance, forming-free and low resistive state (LRS) nonlinearity with less than 130 nA reset current (Ireset ). By contrast with the Al/HfO2 /Ti devices, resistive switching behavior has been enhanced significantly by using CNTs electrode. For the Al/HfO2 /CNTs devices, current–voltage (I-V) characteristics demonstrate that the current conduction in high resistive state (HRS) and low resistive state (LRS) is controlled by space-charge-limited current (SCLC) and trap-controlled SCLC mechanism, respectively.