Development and analysis of nitrogen-doped amorphous InGaZnO thin film transistors. (15th June 2017)

• Record Type: Journal Article
• Authors: Xie, Haiting; Xu, Jianeng; Liu, Guochao; Zhang, Lei; Dong, Chengyuan
• Is Part Of: Materials science in semiconductor processing. Volume 64(2017)
• Page Start: 1
• Page End: 5
• Publication Date: 2017-06-15
• Subjects: Amorphous InGaZnO (a-IGZO) -- Nitrogen doping -- Thin-film transistor (TFT) -- Thermal instability; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.03.003
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The nitrogen-doped (N-doped) amorphous InGaZnO thin film transistors ( a -IGZO TFTs) were investigated against the undoped and oxygen doped (O-doped) devices. The N-doped a-IGZO TFTs exhibited better electrical performance and bias stress stability, and especially more stable thermal properties. The X-ray photoemission spectroscopy (XPS) measurements were carried out at different temperatures (298 K and 393 K) to examine the physical essence of the thermal instability of undoped, O-doped, and N-doped a-IGZO TFTs. The XPS characterization results indicated that nitrogen doping caused lesser oxygen vacancy variation with the temperature (0.6%) compared with undoping (7.2%) and oxygen doping (11.8%). Hence, the a-IGZO TFTs with N-doped active layers had much better stability than those with undoped and O-doped active layers.