A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels. (April 2017)

• Record Type: Journal Article
• Authors: Zhang, Peijian; Wu, Xue; Yi, Qianning; Chen, Wensuo; Yang, Yonghui; Zhu, Kunfeng; Tan, Kaizhou; Zhong, Yi
• Is Part Of: Microelectronics and reliability. Volume 71(2017)
• Page Start: 86
• Page End: 90
• Publication Date: 2017-04
• Subjects: Total dose -- Radiation -- Bipolar transistors -- γ ray; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.02.015
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: We investigate the γ-ray total dose induced degradation of double polysilicon self-aligned (DPSA) bipolar NPN transistors at low dose rate. Through comparing the measured results in low- and high-level injection regions, we find that the main irradiation damages related defects in two regions are quite different. In the case of lower emitter-base (E-B) bias, the damage is mainly localized in E-B interface region. For high-level injection, excess base current mainly results from radiation induced defects in intrinsic base region. Furthermore, a phenomenological model based on qualitatively analytical calculation is adopted to explain the experimental results. Highlights: Radiation damage is mainly localized in E-B interface region. The damage related defects in two injection regions are quite different. A phenomenological model is adopted to explain the experimental results.