Cite
HARVARD Citation
Larrieu, G. et al. (2017). Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires. Solid-state electronics. pp. 9-14. [Online].
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Larrieu, G. et al. (2017). Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires. Solid-state electronics. pp. 9-14. [Online].