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APA Citation
Whiting, P., Holzworth, M., Lind, A., Pearton, S., Jones, K., Liu, L., Kang, T., Ren, F., & Xin, Y. (2017). erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics and reliability, 70, 32–40. http://access.bl.uk/ark:/81055/vdc_100045027366.0x00005e