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HARVARD Citation
Whiting, P. et al. (2017). Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics and reliability. pp. 32-40. [Online].
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Whiting, P. et al. (2017). Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectronics and reliability. pp. 32-40. [Online].