High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties. (April 2017)

• Record Type: Journal Article
• Authors: Peng, Wu-Chang; Chen, Ying-Hung; Chen, Jing-Yu; He, Ju-Liang; Wuu, Dong-Sing
• Is Part Of: Materials science in semiconductor processing. Volume 61(2017)
• Page Start: 85
• Page End: 92
• Publication Date: 2017-04
• Subjects: Titanium monoxide (TiO) -- High power impulse magnetron sputtering (HIPIMS) -- Substrate bias -- Post-annealing; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.01.005
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In view of wide potential use as p-type oxide semiconductor of titanium monoxide (TiO), it is deposited in this work by using high power impulse magnetron sputtering (HIPIMS), which is known to provide less hysteresis effect in reactive sputtering and better control in stoichiometry. A strong correlation among the preparation parameters on the microstructure and optoelectrical characteristics of the obtained Ti-O films are investigated. Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO2 ) at a critical substrate bias voltage of −125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm 2 /V s is grown at the substrate bias voltage of −25 V and followed by the post-annealing at 400 °C. Highlights: High-power impulse magnetron sputtering of ti­ta­nium monox­ide (TiO) films was studied. Ti-O films show strong correlation among growth parameters and material properties. The γ-TiO can transfer into rutile (R-TiO2 ) at a critical substrate bias of –125 V. The γ-TiO can transfer into rutile (R-TiO2 ) after post-annealing at 500°C. Optoelectrical and microstructure properties of obtained Ti-O films are discussed.