Chemically deposited ZnS thin film as potential X-ray radiation sensor. (April 2017)

• Record Type: Journal Article
• Authors: Sarma, M.P.; Kalita, J.M.; Wary, G.
• Is Part Of: Materials science in semiconductor processing. Volume 61(2017)
• Page Start: 131
• Page End: 136
• Publication Date: 2017-04
• Subjects: Semiconductor -- Thin film -- Radiation -- X-Ray -- UV -- Sensor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.01.013
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this article X-ray radiation sensitivity of ZnS thin film prepared by a chemical bath deposition technique has been reported. The films were prepared under 0.10, 0.15 and 0.20 molarity (M). Characterization reports show that the 0.20 M film has the best quality than the other low molarity films. I-V characteristics of the films were studied under dark condition and observed that the film prepared at 0.20 M has an electrical conductivity of 2.06×10 −6 (Ω cm) −1 which is about 10 times greater than the other lower molarity films. Further, the I-V characteristic of this film has studied under UV and X-ray radiations. The current under X-ray radiation is found to be significantly higher than that under the UV radiation. At a fix bias voltage of 1.0 V, the conductivity under UV radiation is found to be 3.26×10 −6 (Ω cm) −1 whereas that under the X-ray is 4.13×10 −5 (Ω cm) −1 . The sensitivity under X-ray radiation is significantly greater than that under the UV radiation. This analysis suggests that the ZnS thin film which is used as a UV radiation sensor can also be used as a potential X-ray radiation sensor.