Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition. (April 2017)

• Record Type: Journal Article
• Authors: Yadav, Asha; Agarwal, Pratima
• Is Part Of: Materials science in semiconductor processing. Volume 61(2017)
• Page Start: 5
• Page End: 10
• Publication Date: 2017-04
• Subjects: a‐Si:H/nc‐Si:H multilayer structure -- Density of states -- Hot wire chemical vapor deposition -- Persistent photoconductivity -- Space-charge limited current; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.12.033
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this study, the density of states (DOS) were determined in single layer hydrogenated amorphous silicon (a-Si: H) and a-Si:H/nc-Si:H (hydrogenated nanocrystalline silicon) multilayered structures, prepared by hot wire chemical vapor deposition, by measuring space-charge limited currents in sandwich geometry using ITO(Indium Tin Oxide)/a-Si:H/Ag and ITO{a‐Si:H/nc‐Si:H} n /Ag structures. Comparisons showed that the DOS of a-Si:H layer in a-Si:H/nc-Si:H multilayer structures were higher than that of single layer a-Si:H film for the same shift in Δ E f n . The higher DOS in multilayer structures may be due to the existence of interface states between the a-Si:H and nc-Si:H layers, which could also change the local electric field at the junction under the no-bias condition. These interface states were also shown to be responsible for the observed persistent photoconductivity in these a-Si:H/nc-Si:H multilayer structures.