The activation energy for Mg acceptor in the Ga-rich InGaN alloys. (February 2017)

• Record Type: Journal Article
• Authors: Zhao, Chuan-Zhen; Wei, Tong; Chen, Li-Ying; Wang, Sha-Sha; Wang, Jun
• Is Part Of: Superlattices and microstructures. Volume 102(2017)
• Page Start: 40
• Page End: 44
• Publication Date: 2017-02
• Subjects: InGaN alloy -- Activation energy -- Mg-doped -- Hydrogen atom like model; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.12.024
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The activation energy for Mg acceptor in Inx Ga1-x N alloys is investigated. It is found that there are three factors to influence the activation energy for Mg acceptor. One is the stronger dependence of the VBM of Inx Ga1-x N depending on In content than that of the Mg acceptor energy level. The other is the concentration of Mg acceptors. Another is the extending of the valence band-tail states into the band gap. In addition, a model based on modifying the effective mass model is developed. It is found that the model can describe the activation energy for Mg acceptor in the Ga-rich Inx Ga1-x N alloys well after considering the influence of the valence band-tail states. Graphical abstract: Highlights: A model is developed to describe the activation energy for Mg acceptor in the Ga-rich Inx Ga1-x N alloys. The factors influencing on the activation energy for Mg acceptor is analyzed. The valence band-tail states in Ga-rich In x Ga1− x N alloys is relative to the InN clusters.