Spin-orbit interaction effects on the electronic structure of coaxial quantum well wires. (January 2017)

• Record Type: Journal Article
• Authors: Ghafari, A.; Vaseghi, B.; Rezaei, G.; Taghizadeh, S.F.; Karimi, M.J.
• Is Part Of: Superlattices and microstructures. Volume 101(2017)
• Page Start: 397
• Page End: 404
• Publication Date: 2017-01
• Subjects: Spin-orbit interaction -- Cylindrical quantum well wire -- Energy -- External fields -- Tunneling -- Anti-crossing; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.11.062
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The finite element method and effective mass approximation are used to investigate the simultaneous effects of SOI, electric and magnetic fields and quantum geometry on the energy and wave function of a cylindrical quantum well wire. Calculations are performed for a typical GaAs / Al x Ga 1 − x As cylindrical quantum well wire. It is found that SOI, external fields and layers thickness have considerable effects on the energy eigenvalues and functions of the system. Moreover it is shown that the tunneling effect and energy level anti-crossing depend on the SOI and external factors. We have proposed the SOI strength as an agent to control the tunneling effect in typical nanostructures. Highlights: SOI and external factor effects on the electronic structure of a CQWW are studied. External fields and SOI have dependent effects on the energy eigenvalues. Energy subband anti-crossing depends on the SOI and external factors. It is possible to control the tunneling by SOI in typical systems.