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HARVARD Citation
Fan, S. et al. (2017). A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV. Advanced energy materials. 7 (2), p. n/a. [Online].
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Fan, S. et al. (2017). A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV. Advanced energy materials. 7 (2), p. n/a. [Online].