A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV. Issue 2 (22nd September 2016)

• Record Type: Journal Article
• Authors: Fan, Shizhao; Shih, Ishiang; Mi, Zetian
• Is Part Of: Advanced energy materials. Volume 7:Issue 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-09-22
• Subjects: hydrogen -- InGaN nanowires -- photoanodes -- solar cells -- tunnel junctions; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201600952
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract : Indium gallium nitride (InGaN) nanowire arrays ( E g ≈1.75 eV) are monolithically integrated on a Si solar cell through a Si tunnel junction. With such a nearly ideal energy bandgap configuration, a saturated photocurrent density of 16.3 mA cm −2 is achieved under AM1.5G one sun illumination. The applied‐bias‐photon‐to‐current efficiency reaches 8.3% at 0.5 V versus normal hydrogen electrode.