Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction. Issue 1 (2nd January 2017)

• Record Type: Journal Article
• Authors: Ono, Shigeaki; Kikegawa, Takumi
• Is Part Of: High pressure research. Volume 37:Issue 1(2017)
• Page Start: 28
• Page End: 35
• Publication Date: 2017-01-02
• Subjects: Gallium phosphide -- high pressure -- X-ray diffraction -- phase transition; High pressure (Science) -- Periodicals; High pressure (Technology) -- Periodicals; 536.41
• DOI: 10.1080/08957959.2016.1269900
• Languages: English
• ISSNs: 0895-7959

Abstract

ABSTRACT: The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27 GPa and 900 K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2 GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa) = 22.6 − 0.0014 × T (K).