Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction. Issue 1 (2nd January 2017) - Ono, Shigeaki
ABSTRACT: The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27 GPa and 900 K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2 GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa) = 22.6 − 0.0014 × T (K).