Design guidelines for GaSb/InAs TFET exploiting strain and device size. (March 2017)

• Record Type: Journal Article
• Authors: Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
• Is Part Of: Solid-state electronics. Volume 129(2017)
• Page Start: 157
• Page End: 162
• Publication Date: 2017-03
• Subjects: Full-quantum simulation -- Tunnel Field-Effect Transistor (TFET) -- Strain configurations; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.11.011
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3 × 10 7 with I ON ≈ 0.33 mA/ μ m at V DD = 0.3 V.