Impact of series resistance on the operation of junctionless transistors. (March 2017)

• Record Type: Journal Article
• Authors: Jeon, Dae-Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gérard
• Is Part Of: Solid-state electronics. Volume 129(2017)
• Page Start: 103
• Page End: 107
• Publication Date: 2017-03
• Subjects: Junctionless transistors (JLTs) -- Bulk neutral conduction -- Series resistance (Rsd) -- Analytical modeling -- De-embedded Rsd effects; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.12.004
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Series resistance (Rsd ) causes significant degradation of gm in junctionless transistors (JLTs). Rsd in short channels also strongly affects the onset of second peak in dgm /dVg of JLTs. The Rsd effects are successfully de-embedded by using a simple equation. Rsd de-embedding procedure can suggest a new method to extract better Vth and Vfb in JLTs. An analytical modeling study confirms those results. Abstract: Transconductance (gm ) and its derivative (dgm /dVg ) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd ) causes significant degradation of intrinsic gm and dgm /dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.