Carrier trapping anisotropy in ambipolar SnO thin-film transistors. (March 2017)

• Record Type: Journal Article
• Authors: Luo, Hao; Liang, Lingyan; Cao, Hongtao
• Is Part Of: Solid-state electronics. Volume 129(2017)
• Page Start: 88
• Page End: 92
• Publication Date: 2017-03
• Subjects: Tin monoxide -- Ambipolar thin-film transistor -- Gate-bias stress; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.01.001
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Anisotropic carrier trapping was observed in ambipolar SnO thin-film transistors. The carrier trapping could be described by the stretched exponential model. The carrier trapping was resulted from the multiple trapping states in the channel or/and at the channel-insulator interface. Abstract: The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 × 10 4 s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs.