Cite
HARVARD Citation
Xiao, Y. et al. (2016). An improved model for the surface potential and drain current in negative capacitance field effect transistors. RSC advances. 6 (105), pp. 103210-103214. [Online].
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Xiao, Y. et al. (2016). An improved model for the surface potential and drain current in negative capacitance field effect transistors. RSC advances. 6 (105), pp. 103210-103214. [Online].