An improved model for the surface potential and drain current in negative capacitance field effect transistors. Issue 105 (31st October 2016)

• Record Type: Journal Article
• Authors: Xiao, Y. G.; Ma, D. B.; Wang, J.; Li, G.; Yan, S. A.; Zhang, W. L.; Li, Z.; Tang, M. H.
• Is Part Of: RSC advances. Volume 6:Issue 105(2016)
• Page Start: 103210
• Page End: 103214
• Publication Date: 2016-10-31
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra21955a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : An improved model for the surface potential and drain current in negative capacitance ferroelectric field effect transistors (NC-FeFETs) was presented by introducing the doping concentration. Abstract : An improved model for the surface potential and drain current in negative capacitance ferroelectric field effect transistors (NC-FeFETs) was presented by introducing the doping concentration. The influence of the doping concentration and temperature on the electric characteristics of NC-FeFET was investigated based on this model. The derived results demonstrated that the subthreshold slope of the metal–ferroelectric–semiconductor NC-FeFET increases, while the drive current decreases when the substrate doping concentration increases from 10 17 m −3 to 10 20 m −3 . Additionally, in the temperature range from 290 K to 380 K, the voltage amplification gradually shrinks, resulting in the subthreshold swing increasing from 51 mV dec −1 to 71 mV dec −1 . These results indicated that silicon doping concentration and temperature are two key factors for optimizing the operation voltage in NC-FeFETs.