Cite
HARVARD Citation
Mohamad, B. et al. (2017). Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology. Solid-state electronics. pp. 10-16. [Online].
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Mohamad, B. et al. (2017). Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology. Solid-state electronics. pp. 10-16. [Online].