Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations. (February 2017)

• Record Type: Journal Article
• Authors: Elmessary, Muhammad A.; Nagy, Daniel; Aldegunde, Manuel; Seoane, Natalia; Indalecio, Guillermo; Lindberg, Jari; Dettmer, Wulf; Perić, Djordje; García-Loureiro, Antonio J.; Kalna, Karol
• Is Part Of: Solid-state electronics. Volume 128(2017)
• Page Start: 17
• Page End: 24
• Publication Date: 2017-02
• Subjects: Schrödinger quantum corrections -- Monte Carlo simulations -- GAA nanowire FET -- LER -- Variability; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.018
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D Schrödinger equation quantum corrections is employed to simulate I D - V G characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) FET demonstrating an excellent agreement against experimental data at both low and high drain biases. We then scale the Si GAA NW according to the ITRS specifications to a gate length of 10 nm predicting that the NW FET will deliver the required on-current of above 1 mA/ μ m and a superior electrostatic integrity with a nearly ideal sub-threshold slope of 68 mV/dec and a DIBL of 39 mV/V. In addition, we use a calibrated 3D FE quantum corrected drift-diffusion (DD) toolbox to investigate the effects of NW line-edge roughness (LER) induced variability on the sub-threshold characteristics (threshold voltage ( V T ), OFF-current ( I OFF ), sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL)) for the 22 nm and 10 nm gate length GAA NW FETs at low and high drain biases. We simulate variability with two LER correlation lengths (CL = 20 nm and 10 nm) and three root mean square values (RMS = 0.6, 0.7 and 0.85 nm).