Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements. (February 2017)

• Record Type: Journal Article
• Authors: Tomaszewski, Daniel; Głuszko, Grzegorz; Łukasiak, Lidia; Kucharski, Krzysztof; Malesińska, Jolanta
• Is Part Of: Solid-state electronics. Volume 128(2017)
• Page Start: 92
• Page End: 101
• Publication Date: 2017-02
• Subjects: MOSFET -- CMOS -- Threshold voltage -- Junction capacitance -- Parameter extraction; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.10.006
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.