Cite
HARVARD Citation
Franco, J. et al. (2016). Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. MRS advances. 1 (49), pp. 3329-3340. [Online].
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Franco, J. et al. (2016). Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. MRS advances. 1 (49), pp. 3329-3340. [Online].