A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET. (12th April 2016)

• Record Type: Journal Article
• Authors: Yu, Panpan; Zhou, Ying; Sun, Ling; Gao, Jianjun
• Is Part Of: International journal of numerical modelling. Volume 29:Number 6(2016:Nov./Dec.)
• Page Start: 1044
• Page End: 1054
• Publication Date: 2016-04-12
• Subjects: MOSFET -- extrinsic resistance -- extraction -- small signal -- radio frequency; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2163
• Languages: English
• ISSNs: 0894-3370

Abstract

Summary: A novel extrinsic resistance extraction method of MOSFET at V gs = V ds = 0 V from S‐parameter measurements is presented in this paper. Simulated and measured results of 90‐nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper. Copyright © 2016 John Wiley & Sons, Ltd.