Effect of periodically modified n-type electron transport layers on the optoelectrical performance of organic light-emitting diodes. (December 2016)

• Record Type: Journal Article
• Authors: Chen, Changbo; Wang, Taohong; Guo, Kunping; Sun, Chang; Zhang, Hao; Yang, Lianqiao; Xu, Tao; Wei, Bin
• Is Part Of: Materials science in semiconductor processing. Volume 56(2016:Dec.)
• Page Start: 272
• Page End: 276
• Publication Date: 2016-12
• Subjects: Microcavity -- Edge emission -- Waveguided loss; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.07.022
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We have investigated the characteristics of Cs2 CO3 doped 4, 7-Diphenyl-1, 10-phenanthroline (Bphen) film and the effects of its thickness on the optoelectrical performance of microcavity organic light-emitting diodes. By doping Cs2 CO3 into Bphen, higher current density and lower turn-on voltage could be achieved with barely changing the external quantum efficiency. Three types of resonators were fabricated by varying the thickness of every a quarter of electron transport layers, i.e. 152.5 nm (0.25 λ), 305 nm (0.5 λ), and 610 nm (1.0 λ). The 0.25λ-based microcavity organic light-emitting diode was found to exhibit the lowest waveguided loss coefficient of 118.0 cm −1, while the relative emission intensity of edge mode to surface reached about 2118.8 times, indicating that this mode underwent a very low attenuation during its propagation.