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HARVARD Citation
Giannazzo, F. et al. (2016). Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors. Physica status solidi. 10 (11), pp. 797-801. [Online].
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Giannazzo, F. et al. (2016). Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors. Physica status solidi. 10 (11), pp. 797-801. [Online].