Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. Issue 44 (20th September 2016)

• Record Type: Journal Article
• Authors: Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G.; Lu, Toh‐Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil
• Is Part Of: Advanced materials. Volume 28:Issue 44(2016)
• Page Start: 9735
• Page End: 9743
• Publication Date: 2016-09-20
• Subjects: band structure -- chemical vapor deposition -- electronic properties -- monolayer transition‐metal dichalcogenides -- transition‐metal doping; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601104
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Large‐area "in situ" transition‐metal substitution doping for chemical‐vapor‐deposited semiconducting transition‐metal‐dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition‐metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct‐bandgap photoluminescence.