Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. Issue 44 (20th September 2016) - Gao, Jian
Abstract : Large‐area "in situ" transition‐metal substitution doping for chemical‐vapor‐deposited semiconducting transition‐metal‐dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition‐metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct‐bandgap photoluminescence.