Cite
HARVARD Citation
Huang, F. et al. (2016). The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices. Nanoscale. 8 (40), pp. 17598-17607. [Online].
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Huang, F. et al. (2016). The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices. Nanoscale. 8 (40), pp. 17598-17607. [Online].