Cite
HARVARD Citation
Lin, Y. et al. (2016). A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates. CrystEngComm. 18 (46), pp. 8926-8932. [Online].
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Lin, Y. et al. (2016). A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates. CrystEngComm. 18 (46), pp. 8926-8932. [Online].