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Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67–69]. (December 2016)
Record Type:
Journal Article
Title:
Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67–69]. (December 2016)
Main Title:
Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67–69]