New fast turn-on speed SCR device for electrostatic discharge protection. (November 2016)

• Record Type: Journal Article
• Authors: Liao, Changjun; Liu, Jizhi; Liu, Zhiwei
• Is Part Of: Microelectronics and reliability. Volume 66(2016)
• Page Start: 38
• Page End: 45
• Publication Date: 2016-11
• Subjects: Electrostatic discharge -- SCR -- Base transit time -- Turn-on speed; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.09.006
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: A new SCR with the variation lateral base doping (VLBD) structure (VSCR) is proposed to improve the turn-on speed for electrostatic discharge (ESD) protection. The turn-on speed of the SCR was determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors of the SCR, and the VLBD structure can reduce the base transit time of the bipolar transistors to improve the turn-on speed of the SCR. The experimental and simulation results show that the turn-on time of the VSCRs with the VLBD structure is 12% less than that of the MLSCR with the traditional uniform base doping without adding extra process masks and increasing the chip area. Highlights: A new SCR with the variation lateral base doping structure is proposed. The variation lateral base doping structure can improve the turn-on speed of the SCR. The lateral base doping profile becomes steeper, and the turn-on time of the SCRs becomes smaller.