Repeatability of indium oxide gas sensors for detecting methane at low temperature. (December 2016)

• Record Type: Journal Article
• Authors: Shaalan, N.M.; Rashad, M.; Abdel-Rahim, M.A.
• Is Part Of: Materials science in semiconductor processing. Volume 56(2016:Dec.)
• Page Start: 260
• Page End: 264
• Publication Date: 2016-12
• Subjects: In2O3 -- Transparent film -- Gas sensing -- Thermal evaporation; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.09.007
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: A simple method for fabricating methane gas sensor of indium oxide (In2 O3 ) transparent film was presented. Indium of 3 mg as a raw material was used to direct deposition of In2 O3 film through a simplified thermal evaporation method. X-ray diffraction confirmed the cubic polycrystalline structure of the as prepared In2 O3 film. The transmittance ( T ) of the film was recorded as high as 96%. The optical band gap ( E g ) of the deposited film was found of 3.68 eV. The sensing properties of In2 O3 film toward methane gas (CH4 ) were investigated at various operating temperatures and various gas concentrations. The prepared film highly detected CH4 gas at concentrations much lower than the explosive limit. Good performance (sensor response and stability) of the film for CH4 gas was exhibited. The film exhibited a good repeatability with repeating the gas sensing measurements towards CH4 .