Phonon–plasmon coupling in Si doped GaN nanowires. (15th November 2016)

• Record Type: Journal Article
• Authors: Rozas-Jiménez, E.; Cros, A.; Murcia-Mascarós, S.; Fang, Z.; Daudin, B.
• Is Part Of: Materials science in semiconductor processing. Volume 55(2016:Nov.)
• Page Start: 63
• Page End: 66
• Publication Date: 2016-11-15
• Subjects: Raman scattering -- Nanowire -- Gallium nitride -- Si doping -- Phonon–plasmon; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.02.017
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon–plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A1 (LO) mode for all samples. This behavior points to phonon–plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.