Cite
MLA Citation
J. Pelloux-Prayer et al.. “Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model.” Solid-state electronics, vol. 125, 2016, pp. 175–181. http://access.bl.uk/ark:/81055/vdc_100038473184.0x00004a